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Low Haze, 300mm Bare Silicon Test Monitor Wafers


Bare Silicon Wafers  
Typical Haze Levels   60 - 100 ppb.
Typical Particles   <100 at greater than or equal to 0.065 μm
Conductivity Type   P type – Boron Doped
Orientation   <100>
Growth Method   MCZ
Diameter   299.80 – 300.20 mm
Center Thickness   750.0 – 800.0 μm
GBIR   <5.0 μm
CZ Resistivity   1.000 – 100.000 Ω−cm




Low Haze, 200mm Bare Silicon Test Monitor Wafers

Typical Haze Levels   95 - 105 ppb.
Typical Particles   <50 at greater than or equal to 0.065 μm
Conductivity Type   P type – Boron Doped
Orientation   <100>
Growth Method   CZ
Diameter   199.80 – 200.20 mm
Center Thickness   700.0 – 750.0 μm
CZ Resistivity   1.000 – 100.000 Ω−cm




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Advantiv Technologies, Inc. · 48890 Milmont Drive, Suite 104-D · Fremont, CA 94538 · Tel: 510-490-8260 · Email: sales@AdvantivTech.com
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